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 DISCRETE SEMICONDUCTORS
DATA SHEET
BTA225 series B Three quadrant triacs high commutation
Product specification September 1997
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur loads. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA225 series B
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA225Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500B 500 25 190 600B 600 25 190 800B 800 25 190 V A A
PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2 gate main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. -500 VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb 91 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/s 6001 MAX. -600 6001 25 -800 800 V A UNIT
It dIT/dt IGM VGM PGM PG(AV) Tstg Tj
2
I t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
2
-
190 209 180 100 2 5 5 0.5 150 125
A A A2s A/s A V W W C C
over any 20 ms period
-40 -
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s.
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS
BTA225 series B
MIN. -
TYP. 60
MAX. 1.0 1.4 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current
2
CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2+ G+ T2+ GT2- G-
MIN. 2 2 2 0.25 -
TYP. 18 21 34 31 34 30 31 1.3 0.7 0.4 0.1
MAX. 50 50 50 60 90 60 60 1.55 1.5 0.5
UNIT mA mA mA mA mA mA mA V V V mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
VD = 12 V; IGT = 0.1 A IT = 30 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 25 A; without snubber; gate open circuit ITM = 30 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. 1000 TYP. 4000 44 2 MAX. UNIT V/s A/ms s
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
BTA140
BTA225 series B
40
Ptot / W
Tmb(max) / C
85
30 25
IT(RMS) / A
BTA140 91 C
= 180 30
1
120 90 60
95
20
105
20
30
15 10
10
115
5
0 125 30
0
5
10
15 IT(RMS) / A
20
25
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.
ITSM / A BTA225
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
IT(RMS) / A BTA140
1000
50
40
dI T /dt limit 100
30
20
IT T 10 10us I TSM time
10
Tj initial = 25 C max 100us 1ms T/s 10ms 100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
ITSM / A BTA140 IT 150 T ITSM time
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 91C.
VGT(Tj) VGT(25 C)
200
1.6 1.4 1.2 1 0.8
BT136
Tj initial = 25 C max 100
50
0.6
0
1
10 100 Number of cycles at 50Hz
1000
0.4 -50
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
IGT(Tj) IGT(25 C)
IT / A Tj = 125 C Tj = 25 C
BTA225 series B
3 2.5 2 1.5 1
BTA216 T2+ G+ T2+ GT2- G-
80 70
BTA140
60 Vo = 1.073 V
Rs = 0.015 ohms
typ
max
50 40 30 20
0.5 0 -50
10
0
50 Tj / C
100
150
0
0
0.5
1
1.5 VT / V
2
2.5
3
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3 2.5 2 1.5 1
TRIAC
10
Zth j-mb (K/W)
BTA140
1
unidirectional bidirectional
0.1
P D tp
0.01
0.5 0 -50
0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s
t
0
50 Tj / C
100
150
10s
Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)
Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
3 2.5 2 1.5 1 0.5
TRIAC
1000
dIcom/dt (A/ms)
BTA225
100
10
0 -50
0
50 Tj / C
100
150
1 20
40
60
80 Tj / C
100
120
140
Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.
Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature.
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BTA225 series B
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BTA225 series B
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
7
Rev 1.200
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135002/1160/02/pp8
Date of release: September
1997
Document order number:
9397 750 06624


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